View PESD3V3L5UV_487392.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PESD3V3L5UV; PESD5V0L5UV Low capacitance 5-fold ESD protection diode arrays in SOT666 package
Product specification 2004 Mar 23
Philips Semiconductors
Product specification
Low capacitance 5-fold ESD protection diode arrays in SOT666 package
FEATURES * Uni-directional ESD protection of up to five lines * Bi-directional ESD protection of up to four lines * Low diode capacitance * Maximum peak pulse power: Ppp = 25 W at tp = 8/20s * Low clamping voltage: VCL(R) = 12 V at Ipp = 2.5 A * Ultra low leakage current: IRM = 8 nA at VRWM = 5 V * ESD protection > 20 kV * IEC 61000-4-2; level 4 (ESD) * IEC 61000-4-5 (surge); Ipp = 2.5 A at Tp = 8/20 s. PINNING APPLICATIONS * Cellular handsets and accessories * Portable electronics * Computers and peripherals * Communications systems * Audio and video equipment. DESCRIPTION Low capacitance 5-fold ESD protection array in the ultra small SOT666 plastic package designed to protect up to five transmission or data lines from the damage caused by Electrostatic Discharge (ESD). MARKING TYPE NUMBER PESD3V3L5UV PESD5V0L5UV Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PESD3V3L5UV PESD5V0L5UV - - DESCRIPTION plastic surface mounted package; 6 leads plastic surface mounted package; 6 leads MARKING CODE(1) *E1 *E2
1 2 3
001aaa213
PESD3V3L5UV; PESD5V0L5UV
QUICK REFERENCE DATA SYMBOL VRWM PARAMETER reverse standoff voltage PESD3V3L5UV PESD5V0L5UV Cd diode capacitance PESD3V3L5UV PESD5V0L5UV 22 16 pF pF 3.3 5 V V VALUE UNIT
number of protected lines 5
PIN 1 2 3 4 5 6 cathode 1
DESCRIPTION common anode cathode 2 cathode 3 cathode 4 cathode 5
6
5
4 1 3 4 5 6 2
sym011
Fig.1 Simplified outline (SOT666) and symbol.
VERSION SOT666 SOT666
2004 Mar 23
2
Philips Semiconductors
Product specification
Low capacitance 5-fold ESD protection diode arrays in SOT666 package
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per diode Ppp Ipp Tj Tamb Tstg Notes 1. Non-repetitive current pulse 8/20 s exponentially decaying waveform; see Fig.2. 2. Measured from any of pins 1, 3, 4, 5 or 6 to pin 2. ESD maximum ratings SYMBOL Per diode ESD electrostatic discharge capability IEC 61000-4-2 (contact discharge); notes 1 and 2 HBM MIL-Std 883 Notes PARAMETER CONDITIONS peak pulse power peak pulse current junction temperature operation ambient temperature storage temperature 8/20 s pulse; notes 1 and 2 8/20 s pulse; notes 1 and 2 - - - -65 -65 PARAMETER CONDITIONS
PESD3V3L5UV; PESD5V0L5UV
MIN.
MAX.
UNIT
25 2.5 150 +150 +150
W A C C C
VALUE
UNIT
20 10
kV kV
1. Device stressed with ten non-repetitive Electrostatic Discharge (ESD) pulses; see Fig.3. 2. Measured from any of pins 1, 3, 4, 5 or 6 to pin 2. ESD standards compliance ESD STANDARD IEC 61000-4-2, level 4 (ESD) HBM MIL-Std 883, class 3 > 4 kV CONDITIONS > 15 kV (air); > 8 kV (contact)
2004 Mar 23
3
Philips Semiconductors
Product specification
Low capacitance 5-fold ESD protection diode arrays in SOT666 package
PESD3V3L5UV; PESD5V0L5UV
handbook, halfpage
120
MLE218
001aaa191
Ipp
Ipp (%)
100 % Ipp; 8 s
100 % 90 %
80
e-t 50 % Ipp; 20 s
40
10 %
0 0 10 20 30 t (s) 40
tr = 0.7 to 1 ns 30 ns 60 ns
t
Fig.2
8/20 s pulse waveform according to IEC 61000-4-5.
Fig.3
Electrostatic Discharge (ESD) pulse waveform according to IEC 61000-4-2.
2004 Mar 23
4
Philips Semiconductors
Product specification
Low capacitance 5-fold ESD protection diode arrays in SOT666 package
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL Per diode VRWM reverse stand-off voltage PESD3V3L5UV PESD5V0L5UV IRM reverse leakage current PESD3V3L5UV PESD5V0L5UV VBR breakdown voltage PESD3V3L5UV PESD5V0L5UV Cd diode capacitance PESD3V3L5UV PESD5V0L5UV VCL(R) clamping voltage PESD3V3L5UV PESD5V0L5UV rdiff differential resistance PESD3V3L5UV PESD5V0L5UV Notes 1. Non-repetitive current pulse 8/20 s exponentially decaying waveform; see Fig.2. 2. Measured from any of pins 1, 3, 4, 5 or 6 to pin 2. notes 1 and 2 Ipp = 1 A Ipp = 2.5 A Ipp = 1 A Ipp = 2.5 A IR = 1 mA - - - - - - - - - - - - f = 1 MHz; VR = 0 V; see Fig.5 VRWM = 3.3 V VRWM = 5 V IR = 1 mA 5.3 6.4 - - - - - - - - PARAMETER CONDITIONS MIN.
PESD3V3L5UV; PESD5V0L5UV
TYP.
MAX.
UNIT
3.3 5 300 25 5.9 7.2 28 19 10 12 10 12 200 100
V V nA nA V V pF pF V V V V
75 5 5.6 6.8 22 16
2004 Mar 23
5
Philips Semiconductors
Product specification
Low capacitance 5-fold ESD protection diode arrays in SOT666 package
GRAPHICAL DATA
001aaa208
PESD3V3L5UV; PESD5V0L5UV
102
001aaa209
Ppp(Tj) Ppp(Tj =25C) 1.0
Ppp (W) 0.8
10
0.6
0.4
0.2
1 1 10
102
103 t p (s)
104
0 0 50 100 Tj (C) 150
Tamb = 25 C. Ipp = 8/20 s exponentially decaying waveform; see Fig.2.
Fig.5 Fig.4 Peak pulse power dissipation as a function of pulse time; typical values.
Relative variation of peak pulse power as a function of junction temperature; typical values.
25 Cd (pF) 20
001aaa210
10 IR(Tj) IR(Tj =25C)
001aaa211
15
(1)
1
(2)
10
5
0 0 1 2 3 4 VR (V) 5
10-1 -75
-25
25
75
125
175 Tj (C)
(1) PESD3V3L5UV. (2) PESD5V0L5UV. f = 1 MHz; Tamb = 25 C.
Fig.7 Fig.6 Diode capacitance as a function of reverse voltage; typical values.
Relative variation of reverse leakage current as a function of junction temperature; typical values.
2004 Mar 23
6
Philips Semiconductors
Product specification
Low capacitance 5-fold ESD protection diode arrays in SOT666 package
PESD3V3L5UV; PESD5V0L5UV
ESD TESTER RZ CZ D.U.T.: PESDxL5UV IEC 61000-4-2 network CZ = 150 pF; RZ = 330
450
RG 223/U 50 coax
4 GHz DIGITAL OSCILLOSCOPE 10x ATTENUATOR
note 1 50
Note 1: Attenuator is only used for open socket high voltage measurements
vertical scale = 200 V/div horizontal scale = 50 ns/div
vertical scale = 5 V/div horizontal scale = 50 ns/div
GND1
PESD5V0L5UV
GND GND2 unclamped +1 kV ESD voltage waveform (IEC61000-4-2 network)
PESD3V3L5UV
clamped +1 kV ESD voltage waveform (IEC61000-4-2 network)
GND
GND
vertical scale = 200 V/div horizontal scale = 50 ns/div unclamped -1 kV ESD voltage waveform (IEC61000-4-2 network)
vertical scale = 5 V/div horizontal scale = 50 ns/div clamped -1 kV ESD voltage waveform (IEC61000-4-2 network)
001aaa219
Fig.8 ESD clamping test setup and waveforms.
2004 Mar 23
7
Philips Semiconductors
Product specification
Low capacitance 5-fold ESD protection diode arrays in SOT666 package
APPLICATION INFORMATION
PESD3V3L5UV; PESD5V0L5UV
The PESDxL5UV is designed for the uni-directional protection of up to five lines or bi-directional protection of four lines from the damage caused by Electrostatic Discharge (ESD) and surge pulses. The PESDxL5UV may be used on lines where the signal polarities are above or below ground. PESDxL5UV can withstand and provides protection from a surge of 25 watts peak pulse power per line for a 8/20 s waveform. Typical application
high speed data lines
high speed data lines
PESDxL5UV
PESDxL5UV
GND
001aaa217
GND
001aaa215
Fig.9
Typical application for uni-directional protection of five lines.
Fig.10 Typical application for bi-directional protection of four lines.
Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. The protection device should be placed as closely as possible to the input terminal or connector. 2. The path length between the protection device and the protected line should be as short as possible. 3. Parallel signal paths should be kept to a minimum. 4. Running protection conductors in parallel with unprotected conductor should be avoided. 5. All printed-circuit board conductive loops (including power and group loops) should be kept to a minimum. 6. The length of the transient return path to ground should be kept to a minimum. 7. The use of shared transient return paths to a common ground point should be avoided. 8. Ground planes should be used whenever possible. 9. For multilayer printed-circuit boards, ground vias should be used. 2004 Mar 23 8
Philips Semiconductors
Product specification
Low capacitance 5-fold ESD protection diode arrays in SOT666 package
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
PESD3V3L5UV; PESD5V0L5UV
SOT666
D
A
E
X
S
YS HE
6
5
4
pin 1 index A
1
e1 e
2
bp
3
wMA Lp detail X
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 0.6 0.5 bp 0.27 0.17 c 0.18 0.08 D 1.7 1.5 E 1.3 1.1 e 1.0 e1 0.5 HE 1.7 1.5 Lp 0.3 0.1 w 0.1 y 0.1
OUTLINE VERSION SOT666
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 01-01-04 01-08-27
2004 Mar 23
9
Philips Semiconductors
Product specification
Low capacitance 5-fold ESD protection diode arrays in SOT666 package
DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION
PESD3V3L5UV; PESD5V0L5UV
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
II
Preliminary data Qualification
III
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2004 Mar 23
10
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2004
SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R76/01/pp11
Date of release: 2004
Mar 23
Document order number:
9397 750 12254

▲Up To Search▲

Price & Availability of PESD3V3L5UV

	To Download PESD3V3L5UV Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .